First-principles calculations of the thermal stability of Ti3SiC2(0001) surfaces

Orellana, Walter; Gutierrez, Gonzalo

Abstract

The energetic, thermal stability and dynamical properties of the ternary layered ceramic Ti3SiC2(0001) surface are addressed by density-functional theory calculations and molecular dynamic (MD) simulations. The equilibrium surface energy at 0 K of all terminations is contrasted with thermal stability at high temperatures, which are inves- tigated by ab initio MD simulations in the range of 800 to 1400 °C. We find that the toplayer (sublayer) surface con- figurations: Si(Ti2) and Ti2(Si) show the lowest surface energies with reconstruction features for Si(Ti2). However, at high temperatures they are unstable, forming disordered structures. On the contrary, Ti1(C) and Ti2(C) despite their higher surface energies, show a remarkable thermal stability at high temperatures preserving the crystalline structures up to 1400 °C. The less stable surfaces are those terminated in C atoms, C(Ti1) and C(Ti2), which at high temperatures show surface dissociation forming amorphous TiCx structures. Two possible atomic scale mechanisms involved in the thermal stability of Ti3SiC2(0001) are discussed.

Más información

Título de la Revista: SURFACE SCIENCE
Volumen: 605
Editorial: ELSEVIER SCIENCE BV
Fecha de publicación: 2011
Página de inicio: 2087
Página final: 2091
Idioma: English
URL: https://doi.org/10.1016/j.susc.2011.08.011
Notas: ISI, SCOPUS