Characterization of pure ZnO thin films prepared by a direct photochemical method
Abstract
In this paper, amorphous ZnO thin films were obtained by direct UV irradiation of β-diketonate Zn(II) precursor complexes spin-coated on Si(1 0 0) and fused silica substrates. ZnO films were characterized by means of XPS, X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). These analyses revealed that as-deposited films are amorphous and have a rougher surface than thermally treated films. Optical characterization of the films showed that these are highly transparent in the visible spectrum with an average transmittance of up to 95% over 400 nm, and an optical band-gap energy of 3.21 eV for an as-deposited film, and 3.27 eV for a film annealed at 800 °C. Low resistivity values were obtained for the ZnO films (1.0 × 10-2 Ω cm) as determined by Van der Pauw four-point probe method. © 2006 Elsevier B.V. All rights reserved.
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Título según WOS: | Characterization of pure ZnO thin films prepared by a direct photochemical method |
Título según SCOPUS: | Characterization of pure ZnO thin films prepared by a direct photochemical method |
Título de la Revista: | JOURNAL OF NON-CRYSTALLINE SOLIDS |
Volumen: | 352 |
Número: | 38-39 |
Editorial: | Elsevier |
Fecha de publicación: | 2006 |
Página de inicio: | 4088 |
Página final: | 4092 |
Idioma: | English |
URL: | http://linkinghub.elsevier.com/retrieve/pii/S0022309306010088 |
DOI: |
10.1016/j.jnoncrysol.2006.07.006 |
Notas: | ISI, SCOPUS |