Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison

Bedoya, C; Condorelli, GG; Di Mauro, A; Anastasi, G; Fragala, IL; Lisoni, JG; Wouters, D

Abstract

MOCVD processes adopting two different precursors Sr(tmhd)(2)pmdeta and Sr(hfac)(2)tetraglyme have been compared. In situ FT-IR monitoring shows that Sr(hfac)(2)tetraglyme posses suitable thermal stability upon sublimation and good mass-transport properties. By contrast, Sr(tmhd)(2)pmdeta posses lower stability which precludes efficient sublimation/evaporation processes, thus requiring reactors equipped with liquid delivery systems for efficient MOCVD processes. Insights on the MOCVD process have been obtained combining in situ FT-IR and ex situ XRD, XPS, SEM and EDX techniques. Homogeneous films have been deposited on Pt/TiN/SiO2/Si substrates in the 300-500 degrees C temperature range. XRD and XPS analyses have shown that fluorine or carbonate containing films are obtained adopting Sr(hfac)(2)tetraglyme or Sr(dpM)(2)pmdeta, respectively. (c) 2004 Published by Elsevier B.V.

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Título según WOS: ID WOS:000228514800057 Not found in local WOS DB
Título de la Revista: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volumen: 118
Número: 1-3
Editorial: Elsevier
Fecha de publicación: 2005
Página de inicio: 264
Página final: 269
DOI:

10.1016/j.mseb.2004.12.045

Notas: ISI