Abstract

Dynamically scaling down the voltage of integrated systems is an effective technique for enabling low-power operation modes. The system is partitioned into several subcircuits, and inactive parts are dynamically biased with low voltages. Additionally, controlling the body bias of subcircuits allows modifying transistor threshold voltages for optimizing speed and power. Both these techniques shift voltages to different levels, demanding dedicated level shifter cells. This paper presents a novel level shifter CMOS architecture able to operate with ultra-low voltages at the expense of reasonable delay and power penalty. Results in technology UTBB FD-SOI 28 nm show the proposed architecture would be controllable by subcircuits of systems operating at 0.19 V, which is lower than the minimum voltage (0.32 V) reachable by the most effective state-of-the-art level shifter cell simulated under the same conditions.