Creep behavior of a dispersion-strengthened Cu-Ti-Al alloy obtained by reaction milling
Abstract
Creep results of a dispersion-strengthened nominal-composition Cu-2.5 vol.%Ti-2.5 vol.%Al alloy, and the adjustment of those results to existing creep models, are presented. The alloy was prepared by reaction milling; its microstructural characterization by transmission electron microscopy had been recently reported elsewhere. Creep tests were here performed at 773, 973 and 1123 K, under loads that produced steady-state creep rates between 9 × 10 -7 and 2 × 10 -4 s -1. Two deformation models, available in the literature, were considered: dislocation creep, where the strain rate is controlled by the dislocation-particle interaction within the grains, and diffusional creep, controlled by the interaction between grain-boundary dislocations and particles. In all creep experiments the alloy exhibited high values of the apparent stress exponent, as typical for dispersion-strengthened alloys. Through model adjustment, the operating creep mechanisms where determined: at 773 and 1123 K, creep is controlled by dislocation/particle interactions taking place in the matrix and in grain boundaries, respectively, while at the intermediate temperature of 973 K, controlling dislocation-particle interactions would occur both in the matrix and in grain boundaries. © 2008 Elsevier B.V. All rights reserved.
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Título según WOS: | Creep behavior of a dispersion-strengthened Cu-Ti-Al alloy obtained by reaction milling |
Título según SCOPUS: | Creep behavior of a dispersion-strengthened Cu-Ti-Al alloy obtained by reaction milling |
Título de la Revista: | MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING |
Volumen: | 498 |
Número: | 01-feb |
Editorial: | ELSEVIER SCIENCE SA |
Fecha de publicación: | 2008 |
Página de inicio: | 397 |
Página final: | 403 |
Idioma: | English |
URL: | http://linkinghub.elsevier.com/retrieve/pii/S0921509308010411 |
DOI: |
10.1016/j.msea.2008.08.031 |
Notas: | ISI, SCOPUS |