Double-Side Cooled SiC MOSFET Power Modules With Sintered-Silver Interposers for a 100-kW/L Traction Inverter
Abstract
Low-profile double-side cooled power modules are emerging in electric-drive inverters to achieve higher power density and efficiency. However, the rigid interconnection between the devices and two substrates raises the thermomechanical reliability issue of double-side cooled modules. In the priorwork, we proposed the use of porous sintered-silver (Ag) interposers in the double-side cooled modules, resulting in reduced thermomechanical stresses, better heat extraction, and lower package parasitic inductance. To further improve the power density and demonstrate the benefits of using the sintered-Ag interposers, we proposed a revised halfbridgemodule layout that further reduced the power-loop parasitic inductance by 23%, improved the power handling capability by 44%, and retained a similar thermomechanical stress reduction. After carefully selecting high-temperature packaging materials, we fabricated the improvedmodule layout with a reasonably high yield due to the deformable feature of sintered-Ag interposers. The thermal testing showed that the module had excellent power handling capability with a junction-to-fluid thermal resistance of 0.76 degrees C/W due to the double-sided cooling. The electrical characterization at elevated temperatures up to 250 degrees C and the switching characterization validated the functionalities of the power modules with SiC devices aimed for high-temperature and fast switching. Six of the double-side cooled power modules with sintered-Ag interposers were assembled into a segmented traction inverter, demonstrating a high power density of over 100 kW/L.
Más información
Título según WOS: | ID WOS:001022008800041 Not found in local WOS DB |
Título de la Revista: | IEEE TRANSACTIONS ON POWER ELECTRONICS |
Volumen: | 38 |
Número: | 8 |
Editorial: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
Fecha de publicación: | 2023 |
Página de inicio: | 9685 |
Página final: | 9694 |
DOI: |
10.1109/TPEL.2023.3273570 |
Notas: | ISI |