Modeling, Design, and Evaluation of Active dv/dt Balancing for Series-Connected SiC MOSFETs

Sun, Keyao; Raszmann, Emma; Wang, Jun; Lin, Xiang; Burgos, Rolando; Dong, Dong; Boroyevich, Dushan

Abstract

Series connection of SiC MOSFETs provides an effective alternative to achieving higher blocking voltage with simpler circuit topologies. However, the voltage imbalance during the switching transient remains a critical issue. Recently, an active dv/dt control approach utilizing a controllable equivalent Miller capacitor has been proved to be an effective, low-loss, and compact solution. This article renders an improved control circuit with comprehensive modeling and analysis. First, the original circuit is modified with an additional bipolar-junction-transistor and pulsed control signal so that the external capacitor can be fully reset every switching cycle. Second, a simplified model of the active dv/dt control is derived to unveil the linear correlation between the control voltage and the device dv/dt during the turn- OFF transient. Third, a feedback control model is described by difference equations for stability analysis, offering parameter selection guidelines for the control process. Fourth, experimental results with two series-connected SiC MOSFETs under 1.5-kV dc-link voltage are demonstrated to validate the open-loop control model and closed-loop stability. Finally, the control method is expanded to eight series-connected devices under 6 kV to prove its scalability and potential for medium-voltage high-current applications.

Más información

Título según WOS: ID WOS:000698580400055 Not found in local WOS DB
Título de la Revista: IEEE TRANSACTIONS ON POWER ELECTRONICS
Volumen: 37
Número: 1
Editorial: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Fecha de publicación: 2022
Página de inicio: 534
Página final: 546
DOI:

10.1109/TPEL.2021.3100246

Notas: ISI