Abstract

Boron-doped graphene quantum dots (B-GQDs) have been synthesized via a microwave reactor assisted process from bulk boron carbide (B4C) crystals and they are shown to exhibit enhanced photoactivity. The B-GQDs are found to have an average lateral width of similar to 6 +/- 2 nm, and thickness of similar to 0.2-0.3 nm. Nano ZnO is incorporated into these B-GQDs to prepare a B-GQDs-ZnO composite based high-performance photo-anode for Dye-Sensitized Solar Cells (DSSCs). The results showed the highest power conversion efficiency of similar to 3.7% with these new composite based DSSCs, showing the potential of this composite in real cell applications.