Semiconductor TiO2-Al2O3 thin film gas sensors derived from aqueous particulate sol-gel process

Abstract

Nanostructured TiO2-Al2O3 films and powders were prepared by a straightforward aqueous particulate sol-gel route. Titanium (IV) isopropoxicle and aluminum chloride were used as precursors, and hydroxypropyl cellulose was used as a polymeric fugitive agent in order to increase the porosity. The effect of Al:Ti molar ratio was studied on the crystallization behavior of the products. X-ray diffraction (XRD) revealed that the powders crystallized at 800 degrees C, containing anatase-TiO2, rutile-TiO2 and cubic Al2O3 phases. Furthermore, it was found that Al2O3 retarded the anatase to rutile transformation. Transmission electron microscope (TEM) image showed that one of the smallest crystallite sizes was obtained for TiO2-Al2O3 binary mixed oxide, being 3 nm at 600 degrees C. Field emission scanning electron microscope (FE-SEM) analysis revealed that the deposited thin films had nanostructured morphology with the average grain size in the range 20-70 nm at 800 degrees C depending on Al:Ti molar ratio. Thin films produced under optimized conditions showed excellent microstructural properties for gas sensing applications. They exhibited a remarkable response towards low concentrations of CO gas at operating temperature of 400 degrees C. (C) 2014 Elsevier Ltd. All rights reserved.

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Título según WOS: ID WOS:000345644000095 Not found in local WOS DB
Título de la Revista: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volumen: 27
Editorial: ELSEVIER SCI LTD
Fecha de publicación: 2014
Página de inicio: 711
Página final: 718
DOI:

10.1016/j.mssp.2014.07.051

Notas: ISI