Abstract

Advances in emerging resistive random-access memory (ReRAM) technology show promise to be used in future memory-centric computing systems. In ReRAM arrays that consist of two-terminal bipolar resistive switching (RS) devices, SET/RESET programming voltage pulses are used to switch them from low resistance state (LRS) to high resistance state (HRS). The recent commercialization of discrete and crossbararray organized RS devices have certainly pushed forward experimentation with such emerging memory technology. One barrier still preventing their widespread practical use is the behavioral variability and the lack of a straightforward manner to implement the forming process and achieve uniform SET/RESET programing. In this paper, different circuit topologies and approaches are explored to perform the forming of the conductive channel in commercial discrete RS devices by Knowm Inc. A target-resistance is pursued through pulsed voltage stress, followed by cycle-to-cycle stabilization using a custom transimpedance amplifier circuit. Moreover, a voltage controlled low-current source is proposed as an approach to alleviate the complexity and risk of the forming process in device characterization.