Abstract

Networks of bipolar memristors have a rich collective switching behavior, which can be exploited in computing applications. Such a small network is formed by a pair of bipolar memristors connected in a series or anti-series configuration. The latter is known as complementary resistive switch (CRS), and has been studied for memory and for logic applications. While CRS structures have been investigated with voltage-based driving schemes, the collective behavior of current-driven networks of memristors has not yet been explored. To this end, here we present preliminary experimental results from two bipolar self-directed channel (SDC) memristors by Knowm Inc., connected in series with the same or the opposite polarity, driven by current. The amplitude of the applied current pulses varied between vertical bar 0.1 uA vertical bar and vertical bar 1.0 uA vertical bar. The results demonstrate that current-based driving is effective for programming simultaneously memristors that are connected in series. Moreover, the devices in the CRS configuration respond in a complementary way to the applied input current. We observed a stable and uniform performance of the devices in all our experiments. Current pulses of vertical bar 0.1 uA vertical bar did not affect the state of the memristors, so they can be used to perform READ operations in current-driven resistive memory modules.