A Robust BBPLL-Based 0.18-μm CMOS Resistive Sensor Interface With High Drift Resilience Over a-40 °C-175 °C Temperature Range

Marin, Jorge

Abstract

This paper presents a drift-resilient time-based resistive sensor interface in a 0.18-mu m CMOS technology. The interface is built around only two oscillators, a phase detector, a digital filter, and a digital-to-analog converter (DAC), resulting in a simple first-order Delta-Sigma design with a predictable transfer function. The highly digital approach not only results in a small area but also implies that only a few analog circuits are sensitive to drift. The holistic drift-resilience strategy implemented combines time-based chopping and voltage-controlled oscillator (VCO) tuning to remove the dc and low-frequency errors introduced by VCO nonidealities and drift. These techniques do not introduce a significant area and power overhead. Silicon measurements show that the proposed bang-bang phase-locked loop (BBPLL)-based sensor interface exhibits ppm-level gain drift and offset drift for the entire -40 degrees C-175 degrees C temperature range while using a single-temperature calibration scheme and no external accurate references nor components for this drift stability. The interface provides a 15-effective number of bits conversion for a 100-ms conversion time and consumes 3.41 mW of power and occupies only 0.23 mm(2) of the active area.

Más información

Título según WOS: ID WOS:000473434300005 Not found in local WOS DB
Título de la Revista: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volumen: 54
Número: 7
Editorial: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Fecha de publicación: 2019
Página de inicio: 1862
Página final: 1873
DOI:

10.1109/JSSC.2019.2911888

Notas: ISI