Abstract

The transfer matrix method is employed to study the electron tunneling in GaAs/GaAlAs triangular double- barrier heterostructure. The barrier width enhances the tunneling lifetime of electrons. Without Gamma - X crossover in the conduction band, the resonance energy is almost constant whereas the tunneling lifetime of electrons increases as the pressure increases. Above the critical pressure, Gamma - X crossover takes place. With Gamma - X crossover, the energy of resonance decreases. The transparency peak becomes wider at high pressure and the electrons move with high velocity in the heterostructure at resonance when the heterostructure is subjected to high pressure.