Plasmon-induced hot-carrier generation differences in gold and silver nanoclusters

Douglas-Gallardo, Oscar A.; Berdakin, Matías; Frauenheim, Thomas; Sánchez, Cristián G.

Abstract

In the last thirty years{,} the study of plasmonic properties of noble metal nanostructures has become a very dynamic research area. The design and manipulation of matter in the nanometric scale demands a deep understanding of the underlying physico-chemical processes that operate in this size regimen. Here{,} a fully atomistic study of the spectroscopic and photodynamic properties of different icosahedral silver and gold nanoclusters has been carried out by using a Time-Dependent Density Functional Tight-Binding (TD-DFTB) model. The optical absorption spectra of different icosahedral silver and gold nanoclusters of diameters between 1 and 4 nanometers have been simulated. Furthermore{,} the energy absorption process has been quantified by means of calculating a fully quantum absorption cross-section using the information contained in the reduced single-electron density matrix. This approach allows us take into account the quantum confinement effects dominating in this size regime. Likewise{,} the plasmon-induced hot-carrier generation process under laser illumination has been explored from a fully dynamical perspective. We have found noticeable differences in the energy absorption mechanisms and the plasmon-induced hot-carrier generation process in both metals which can be explained by their respective electronic structures. These differences can be attributed to the existence of ultra-fast electronic dissipation channels in gold nanoclusters that are absent in silver nanoclusters. To the best of our knowledge{,} this is the first report that addresses this topic from a real time fully atomistic time-dependent approach.

Más información

Título de la Revista: Nanoscale
Volumen: 11
Número: 17
Editorial: ROYAL SOC CHEMISTRY
Fecha de publicación: 2019
Página de inicio: 8604
Página final: 8615
URL: http://dx.doi.org/10.1039/C9NR01352K
Notas: ISI