Abstract

The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.