Abstract

In this work, we report the effects of different H2O2 concentrations on the growth velocity of ZnO thin films deposited by SILAR method·H2O2 effects on the films’ growth velocity were studied by Rutherford Backscattering Spectroscopy (RBS) technique. RBS results showed that thickness can be increased from 0 up to 290 ± 20 [nm] by increasing the H2O2 concentration from 0 to 30 %, evidencing the strong catalyzer effect of H2O2 on the films’ growth velocity. Our study provides relevant insights on the use of H2O2 as a key parameter for tuning the thickness of SILAR-deposited ZnO thin films.