Synthesis of dimethyl- and diphenylsilane-based oligo(azine)s: Thermal, optical, electronic, and morphological properties

Sobarzo P.A.; Jessop I.A.; Pérez Y.; Hauyon R.A.; Velázquez-Tundidor M.V.; Medina J.; González A.; García L.E.; González-Henríquez C.M.; Coll D.; Ortiz P.A.; Tundidor-Camba A.; Terraza C.A.

Keywords: optical and photovoltaic applications; optical properties; polycondensation

Abstract

Four new oligo(azine)s were synthesized from dimethyldiphenylsilane and tetraphenylsilane core-based dialdehydes and hydrazine by high-temperature polycondesation and proposed as materials for optoelectronic applications. The oligo(azine)s were characterized by EA, FT-IR, and NMR. Although most of samples were poorly soluble, TPS-containing PAZ-4 was soluble in aprotic polar solvents. According to SEC and FT-IR studies, the samples were oligomers with up to five repeating units long. TGA showed highly stable samples with TDT10% over 420°C except for PAZ-1 that contains a DMS core along with phenyl units, and thus, the lowest carbon content in the series. From DSC analysis, the substitution of phenyl groups in PAZ-1/3 by biphenyl moieties in PAZ-2/4 allowed to obtain oligo(azine)s with lower Tg values. PAZ-4 showed a UV-A absorption with optical band-gap values of 2.91 and 2.65 eV from UV–vis (solution) and DRS (films), respectively. PL analysis showed a violet emission. PAZ-4 showed resistivity of 29.24 Ω cm, similar to wide-band gap materials. Their contact angle measurements showed a critical surface tension of 42.29 dynes/cm, revealing its hydrophobicity. AFM analysis indicated that the PAZ-4 films had homogeneous surfaces. Young's modulus close to 4.46 GPa was established by microindentation for the PAZ-4 thin-films.

Más información

Título según WOS: Synthesis of dimethyl- and diphenylsilane-based oligo(azine)s: Thermal, optical, electronic, and morphological properties
Título de la Revista: Journal of Applied Polymer Science
Volumen: 139
Número: 38
Editorial: John Wiley and Sons Inc.
Fecha de publicación: 2022
Idioma: English
DOI:

10.1002/app.52911

Notas: ISI