Band gap determination in multi-band-gap CuFeO2 delafossite epitaxial thin film by photoconductivity

Vojkovic, S.; Fernandez, J.; Elgueta, S.; Vega, F. E.; Rojas, S. D.; Wheatley, R. A.; Seifert, B.; Wallentowitz, S.; Cabrera, A. L.

Abstract

The photoconductivity within a wavelength range of 450-1100 nm was determined for a sample of epitaxial delafossite CuFeO2 film grown by pulsed laser deposition. The film thickness was estimated to be 75 nm. The resistance of the films was determined with four-contact van der Pauw's method and using monochromatic illumination of the film. The most significant change in resistance resulted in three rapid lineal conductivity increases at photon energies of similar to 1.5 eV (gap-1), similar to 2.1 eV (gap-2) and similar to 2.5 eV (gap-3). The conductivity properties are well correlated with prior optical absorption results obtained in the NIR-VIS region using transmittance spectroscopy.

Más información

Título de la Revista: SN APPLIED SCIENCES
Volumen: 1
Número: 11
Editorial: SPRINGER INTERNATIONAL PUBLISHING AG
Fecha de publicación: 2019
DOI:

10.1007/s42452-019-1387-2

Notas: WOS-ESCI