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OxRRAM non-volatile memory devices R&D
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| Fecha de publicación: | 2006 |
| Objetivos: | NiOx and WOx films were implemented in OxRRAM with characteristics lengths ~40-90nm, which allows us to investigate the physical limits of the resistive switching mechanisms |
| Año de Inicio/Término: | 2006-2009 |
| Financiamiento/Sponsor: | imec |
| Rol del Usuario: | INVESTIGADOR(A) ASOCIADO(A) |
| DOI: |
Emerging Memories Program |
| Notas: | Project developed as a senior researcher in imec. |