Study of nitrogen implantation in Ti surface using plasma immersion ion implantation deposition technique as biocompatible substrate for artificial membranes

Cisternas, M.; Bhuyan, H.; Retamal, M. J.; Casanova-Morales, N.; Favre, M.; Volkmann, U. G.; Saikia, P.; Diaz-Droguett, D. E.; Maendl, S.; Manova, D.; Moraga, N.; Chandia-Cristi, A.; Alvarez, A.; Guzman, F.


The present investigation reports the modification of Ti substrates by a plasma technique to enhance their physio-chemical properties as biocompatible substrates for the deposition of artificial membranes. For that purpose, nitrogen ions are implanted into Ti substrate using the plasma immersion ion implantation deposition (PIII ) technique in a capacitively coupled radio frequency plasma. The plasma was characterized using optical emission spectroscopy, together with radio frequency compensated Langmuir probe, while the ion current towards the substrate was measured during the implantation process using an opto-electronic device. X-ray photoelectron spectroscopy (XPS) was used for chemical analysis of the surface, confirming the presence of delta-TiN. The penetration depth of the nitrogen ions into the Ti substrate was measured using secondary ions mass spectroscopy (SIMS) while the morphological changes were observed using atomic force microscopy (AFM). A calorimetric assay was used to prove that the TiN samples maintain the biocompatibility of the untreated Ti surface with its native oxide layer. The ion implantation increases the load bearing ability of Ti surface by the formation of alpha-Ti(N) and delta-TiN phases on the sub-surface of Ti, and maintains the bio compatibility of Ti surface. After the plasma treatment a thin layer of chitosan (CH) was deposited in order to provide a moisturizing matrix for the artificial membrane of 1,2-dipalmitoyl-sn-3- phosphor glycerocholine (DPPC). The CH and subsequently the DPPC were deposited on the plasma deposited TiN substrate by using physical vapor deposition. The formation of artificial membranes was confirmed by AFM, measuring the topography at different temperatures and performing force curves.

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Título según WOS: ID WOS:000537712500003 Not found in local WOS DB
Volumen: 113
Editorial: Elsevier
Fecha de publicación: 2020


Notas: ISI