Photoelectrochemical reduction of nitrate on p-Si coated with metallic Re thin films

Muñoz E; Schrebler, R; Henríquez R.; Heyser, C; Verdugo, PA; Marotti, R

Abstract

In this study we examined the rhenium electrodeposition process onto p-Si(100) from acidic media. The study was carried out by means of cyclic voltammetry and the potential-steps method from which the corresponding nucleation and growth mechanism were determined. Both methods were performed under illumination using a solar simulator for electron photogeneration. A 3D progressive nucleation, diffusion-controlled growth of rhenium films was found. Likewise, a morphologic analysis was completed for the deposits obtained at different potential values by means of atomic force microscopy. An energetic characterization through capacitance measurements (Mott-Schottky plots and parallel capacitance) of the p-Si/NO3 - and p-Si/Re/NO3 - interfaces was done. The photoelectrochemical reduction of nitrate ions, PERN, on the different p-Si/Re electrode systems synthesized was studied. An overpotential decrease of 0.3 V and a photocurrent increase for the PERN on p-Si(100)/Re electrode systems compared with p-Si(100) and metallic Re was found. Finally, the kinetic parameters of the cathodic reactions in the p-Si and p-Si/Re acidic media were estimated using intensity modulated photocurrent spectroscopy. A brief analysis from this technique was done. According to these results, the p-Si/Re electrode system could be a potential photoelectrocatalyst for the PERN. © 2009 Elsevier B.V. All rights reserved.

Más información

Título según WOS: Photoelectrochemical reduction of nitrate on p-Si coated with metallic Re thin films
Título según SCOPUS: Photoelectrochemical reduction of nitrate on p-Si coated with metallic Re thin films
Título de la Revista: THIN SOLID FILMS
Volumen: 518
Número: 1
Editorial: Elsevier
Fecha de publicación: 2009
Página de inicio: 138
Página final: 146
Idioma: English
URL: http://linkinghub.elsevier.com/retrieve/pii/S0040609009010499
DOI:

10.1016/j.tsf.2009.06.010

Notas: ISI, SCOPUS