Materials compatibility between Si/SiO2 substrates and BaTiO3 thin films

Caballero J.V.; Fuenzalida, V.M.; Ávila R.; Eisele I.

Keywords: spectroscopy, films, silicon, barium, silica, ray, substrates, interfaces, thin, depth, photoelectron, interdiffusion, profiling, chemical, X, reactions, (materials), titanate, (solids)


BaTiO3 thin films, 50-60 nm in thickness, were evaporated in Ultra High Vacuum as well as under 1 mPa O2 pressure onto Si/SiO2 (30 nm) wafers. The substrate temperature during the evaporations was approximately 70°C. The films were flash annealed in oxygen at 500°C. The interfacial reactions were studied by XPS and AES Ar ion assisted depth profiling, and by RBS Interdiffusion took place even at 70°C. The XPS/AES depth profiles suggested strong interdiffusion, with Ba being the dominant moving species. The SiO2/BaTiO3 interface smears out with significant Ba concentrations up to half of the SiO2 thickness. Ti diffusion is remarkably lower. Barium is detected up to the SiO2/Si interface.

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Título de la Revista: Materials Research Society Symposium Proceedings
Volumen: 403
Editorial: Materials Research Society
Fecha de publicación: 1996
Página de inicio: 189
Página final: 193