Electronic structure of cubic gallium nitride films grown on GaAs

Ding S.A.; Neuhold G.; Weaver J.H.; Haberle, P.; Horn, K; Brandt O.; Yang H.; Ploog K.


The composition, surface structure, and electronic structure of zinc blende-GaN films grown on GaAs (100) and (110) by plasma-assisted molecular beam epitaxy were investigated by means of core and valence level photoemission. Angle-resolved photoelectron spectra (photon energy 30-110 eV) exhibited emission from the Ga 3d and N 2s levels, as well as a clear peak structure in the valence band region. These peaks were found to shift with photon energy, indicative of direct transitions between occupied and unoccupied GaN bands. By using a free electron final band, we are able to derive the course of the bands along the ?-X and ?-K-X directions of the Brillouin zone and to determine the energy of critical points at the X point. The relative energies of the Ga 3d and nitrogen 2s bands were also studied, and a small amount of dispersion was detected in the latter. The resulting band structure is discussed in relation to existing band structure calculations. © 1996 American Vacuum Society.

Más información

Título de la Revista: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volumen: 14
Número: 3
Editorial: Society of Laparoendoscopic Surgeons
Fecha de publicación: 1996
Página de inicio: 819
Página final: 824
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5844321303&partnerID=q2rCbXpz