Electrical properties of BaTiO3 thin films flash-evaporated on Si and SiO2/Si

Caballero J.V.; Avila R.E.; Fuenzalida, V.M.; Eisele I.

Keywords: films, electron, silicon, barium, silica, curves, voltage, capacitance, stresses, injection, measurement, interfaces, thin, evaporation, electrons, capacitors, annealing, amorphous, flash, current, permittivity, effect, Electric, (materials), Semiconducting, titanate, Schottky


BaTiO3 (BT) thin films were prepared by flash evaporation onto p-Si and SiO2/p-Si. The films are amorphous and remain so after a thickness reduction by 20% by annealing at 500 °C for 3 min. in O2 atmosphere. The electrical characteristics were measured at room temperature. Electron injection at the Al to BT interface of Al/BT/Si capacitors is enhanced by the Schottky effect, yielding a value of 11.2 for the dielectric constant of BT. Modeling current-time measurements yields a trap density of 1024 m-3, 0.82 eV below the conduction band. Capacitance-voltage curve shifts due to bias stress on Al/BT/SiO2/Si capacitors are interpreted as caused by electron injection and trapping in the BT films. Starting deposition at 170 °C or post-deposition annealing reduces the trap density and increases the C-V curve shifts by bias stress, from 0.3 to over 14 V at bias stress of -10 V.

Más información

Título de la Revista: Materials Research Society Symposium Proceedings
Volumen: 446
Editorial: Materials Research Society
Fecha de publicación: 1997
Página de inicio: 355
Página final: 360
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030705414&partnerID=q2rCbXpz